3.5 E-MOSFET Data Sheet Interpretation
A data sheet for an E-MOSFET, the FDMS86180, is shown in Figure 3.5.1 . This is an N-channel, high power device using trench construction.
One of the first things that might jump out is the β100% RoHS Compliantβ green leaf logo in the upper center, meaning that the device meets the Restriction of Hazardous Substances directive. The device comes in the flat, multi-pin Power 56 package and features an ππ·π(ππ) of just a few milliohms. Continuous current capability at room temperature is 151 amps with a pulsed current maximum of 775 amps. In Figure 3.5.1π we find a breakdown voltage of 100 volts and an πΌπ·ππ of only 1 π A. Recall that this is a normally off device, and thus πΌπ·ππ represents a leakage current. Continuing, ππΊπ(π‘β) varies between 2.0 and 4.0 volts, with 3.2 volts being typical. The forward transconductance, ππ (here referred to as ππΉπ ) is 144 siemens at a drain current of 67 amps. This is orders of magnitude greater than what we might see with small signal devices. Turn-on and turn-off times are measured in the tens of nanoseconds, verifying the high speed switching ability of the device.
A series of performance graphs are found in Figure 3.5.1π . In the upper left is a section of drain curves showing the ohmic region through ππ·π=5 V. The plot directly below this shows the increase in ππ·π(ππ) as temperature rises. There is about a three-fold variation across the temperature range. At lower left is the characteristic curve variation. Note that the curves are less steep as temperature increases, showing a decrease in ππ and thus, verifying a negative temperature coefficient of transconductance.
