4.5 Exercises

Analysis Problems

  1. For the amplifier of Figure 4.5.1 , determine 𝑍𝑖𝑛 and 𝐴𝑣 . 𝑉𝑖𝑛 = 20 mV, 𝐼𝐷𝑆𝑆 = 10 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’2 V, 𝑉𝐷𝐷 = 20 V, 𝑅𝐺 = 750 k Ξ© , 𝑅𝐷 = 2 k Ξ© , 𝑅𝐿 = 4 k Ξ© , 𝑅𝑆 = 1 k Ξ© , π‘…π‘†π‘Š = 200 Ξ© .
  2. For the amplifier of Figure 4.5.1 , determine 𝑍𝑖𝑛 and π‘‰π‘œπ‘’π‘‘ . 𝑉𝑖𝑛 = 25 mV, 𝐼𝐷𝑆𝑆 = 15 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’2 V, 𝑉𝐷𝐷 = 22 V, 𝑅𝐺 = 330 k Ξ© , 𝑅𝐷 = 2 k Ξ© , 𝑅𝐿 = 6 k Ξ© , 𝑅𝑆 = 510 Ξ© , π‘…π‘†π‘Š = 220 Ξ© .
    Figure 4.5.1
  3. For the circuit of Figure 4.5.2 , determine 𝑍𝑖𝑛 and 𝐴𝑣 . 𝑉𝑖𝑛 = 10 mV, 𝐼𝐷𝑆𝑆 = 12 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’2.5 V, 𝑉𝐷𝐷 = 26 V, 𝑅𝐺 = 510 k Ξ© , 𝑅𝐷 = 1.2 k Ξ© , 𝑅𝐿 = 25 k Ξ© .
  4. For the circuit of Figure 4.5.2 , determine 𝑍𝑖𝑛 and π‘‰π‘œπ‘’π‘‘ . 𝑉𝑖𝑛 = 25 mV, 𝐼𝐷𝑆𝑆 = 15 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’1.5 V, 𝑉𝐷𝐷 = 24 V, 𝑅𝐺 = 820 k Ξ© , 𝑅𝐷 = 1 k Ξ© , 𝑅𝐿 = 12 k Ξ© .
    Figure 4.5.2
  5. For the circuit of Figure 4.5.3 , determine 𝑍𝑖𝑛 and π‘‰π‘œπ‘’π‘‘ . 𝑉𝑖𝑛= 25 mV, 𝐼𝐷𝑆𝑆 = 8 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’3.5 V, 𝑉𝐷𝐷 = 24 V, 𝑅1 = 1 M Ξ© , 𝑅2 = 100 k Ξ© , 𝑅𝐷 = 800 Ξ© , 𝑅𝐿 = 10 k Ξ© .
  6. For the circuit of Figure 4.5.3 , determine 𝑍𝑖𝑛 and 𝐴𝑣 . 𝑉𝑖𝑛 = 10 mV, 𝐼𝐷𝑆𝑆 = 6 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’4 V, 𝑉𝐷𝐷 = 26 V, 𝑅1 = 2 M Ξ© , 𝑅2 = 120 k Ξ© , 𝑅𝐷 = 1.2 k Ξ© , 𝑅𝐿 = 15 k Ξ© .
    Figure 4.5.3
  7. For the circuit of Figure 4.5.4 , determine 𝑍𝑖𝑛 and π‘‰π‘œπ‘’π‘‘ . 𝑉𝑖𝑛 = 20 mV, 𝐼𝐷(π‘œπ‘›) = 6 mA at 𝑉𝐷𝑆(π‘œπ‘›) = 3 V, 𝑉𝐺𝑆(π‘‘β„Ž) = 2.5 V, 𝑉𝐷𝐷 = 34 V, 𝑅1 = 1 M Ξ© , 𝑅2 = 100 k Ξ© , 𝑅𝐷 = 1 k Ξ© , 𝑅𝐿 = 10 k Ξ© .
  8. For the circuit of Figure 4.5.4 , determine 𝑍𝑖𝑛 and 𝐴𝑣 . 𝑉𝑖𝑛 = 15 mV, 𝐼𝐷(π‘œπ‘›) = 10 mA at 𝑉𝐷𝑆(π‘œπ‘›) = 4 V, 𝑉𝐺𝑆(π‘‘β„Ž) = 2 V, 𝑉𝐷𝐷 = 30 V, 𝑅1 = 2 M Ξ© , 𝑅2 = 180 k Ξ© , 𝑅𝐷 = 1.2 k Ξ© , 𝑅𝐿 = 15 k Ξ© .
    Figure 4.5.4
  9. For the circuit of Figure 4.5.5 , determine 𝑍𝑖𝑛 and π‘‰π‘œπ‘’π‘‘ . 𝑉𝑖𝑛= 200 mV, 𝐼𝐷𝑆𝑆 = 15 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’3 V, 𝑉𝐷𝐷 = 15 V, 𝑅𝐺 = 910 k Ξ© , 𝑅𝐿 = 10 k Ξ© , 𝑅𝑆 = 330 Ξ© .
  10. For the circuit of Figure 4.5.5 , determine 𝑍𝑖𝑛 and π‘‰π‘œπ‘’π‘‘ . 𝑉𝑖𝑛 = 200 mV, 𝐼𝐷𝑆𝑆 = 20 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’2 V, 𝑉𝐷𝐷 = 12 V, 𝑅𝐺 = 1 M Ξ© , 𝑅𝐿 = 1.8 k Ξ© , 𝑅𝑆 = 220 Ξ© .
    Figure 4.5.5
  11. For the circuit of Figure 4.5.6 , determine 𝑍𝑖𝑛 and 𝐴𝑣 . 𝐼𝐷𝑆𝑆 = 18 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’2 V, 𝑉𝐷𝐷 = 12 V, 𝑉𝑆𝑆 = βˆ’4 V, 𝑅𝐺 = 680 k Ξ© , 𝑅𝐿 = 10 k Ξ© , 𝑅𝑆 = 1 k Ξ© .
  12. For the circuit of Figure 4.5.6 , determine 𝑍𝑖𝑛 and 𝐴𝑣. 𝐼𝐷𝑆𝑆 = 20 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’2 V, 𝑉𝐷𝐷 = 10 V, 𝑉𝑆𝑆 = βˆ’6 V, 𝑅𝐺 = 2.2 M Ξ© , 𝑅𝐿 = 5 k Ξ© , 𝑅𝑆 = 510 Ξ© .
    Figure 4.5.6

Design Problems

  1. Following the circuit of Figure 4.5.1 , design an amplifier with a gain of at least 5 and an input impedance of at least 500 k Ξ© . 𝑅𝐿 = 10 k Ξ© . The MOSFET has the following parameters: 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’2 V, 𝐼𝐷𝑆𝑆 = 25 mA. Try to use standard resistor values.
  2. Using the circuit of Figure 4.5.5 , design a follower with a gain of at least .75 and an input impedance of at least 1 M Ξ© . 𝑅𝐿 = 2 k Ξ© . The MOSFET has the following parameters: 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’1.5 V, 𝐼𝐷𝑆𝑆 = 40 mA. Try to use standard resistor values.

Challenge Problems

  1. For the circuit of Figure 4.5.7 , determine 𝑍𝑖𝑛 and 𝐴𝑣 . 𝐼𝐷𝑆𝑆 = 15 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’2 V.
    Figure 4.5.7
  2. For the circuit of Figure 4.5.8 , determine 𝑍𝑖𝑛 and 𝐴𝑣 . 𝐼𝐷𝑆𝑆 = 12 mA, 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’1.5 V.
    Figure 4.5.8

Computer Simulation Problems

  1. Utili 𝑍𝑖𝑛 g manufacturer’s data sheets, find devices with the following specifications (typical) and verify them using the measurement techniques presented in the prior chapter.
    1. Device 1: 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’2 V, 𝐼𝐷𝑆𝑆 = 25 mA.
    2. Device 2: 𝑉𝐺𝑆(π‘œπ‘“π‘“) = βˆ’1.5 V, 𝐼𝐷𝑆𝑆 = 40 mA.
  2. Using the device model from the preceding problem, verify the design of Problem 4.
  3. Using the device model from Problem 17, verify the design of Problem 14.

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